Performance Analysis of Gate-All-Around Field Effect Transistor for CMOS Nanoscale Devices
نویسندگان
چکیده
منابع مشابه
Performance Analysis of Gate-All-Around Field Effect Transistor for CMOS Nanoscale Devices
This paper explains the performance analysis of Gate-AllAround silicon nanowire with 80nm diameter field effect transistor based CMOS based device utilizing the 45-nm technology. Simulation and analysis of nanowire (NW) CMOS inverter show that there is the reduction of 70% in leakage power and delay minimization of 25% as compared with 180 nm channel length.Gate-All-Aorund (GAA) configuration p...
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ژورنال
عنوان ژورنال: International Journal of Computer Applications
سال: 2013
ISSN: 0975-8887
DOI: 10.5120/14616-2874